Influence of Solid-State Microstructure on the Electronic Performance of TES-ADT

Time-of-flight photoconductivity measurements of four different phases of TES-ADT material.

Time-of-flight photoconductivity measurements of four different phases of TES-ADT material.

Together with Imperial College, Holst Centre, ICMM Madrid, University of Kentucky and ETH Zürich  we have been investigating electric transport properties of  5,11-bis(triethylsilylethynyl) anthradithiophene (TES ADT). TES ADT– one of the most promising, solution-processable small-molecular organic semiconductors – was analyzed, revealing the highest performing polymorph among four solid-state phases, opening pathways toward the reliable fabrication of high-performance bottom-gate/bottom-contact transistors. The results are published in Chemistry of Materials.

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