Single-step processing of TES-ADT based transistors

Optical microscopy of a thin TES-ADT layer presenting fantasy shapes.

Our lab was involved in a discovery of a simple, alternative route towards high-mobility structures of the small-molecular semiconductor 5,11-bis(triethyl silylethynyl) anthradithiophene – TES-ADT that requires one single processing step without the need for any post-deposition processing. The method relies on careful control of the casting temperature of the semiconductor and allows rapid production of transistors with uniform and reproducible device performance over large areas. More information can be found in the published paper.

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