Author Archives: pavlica

We have performed a systematic study of dependence of time-resolved photocurrent on the point of charge excitation within the organic semiconductor channel formed by two coplanar metal electrodes. The results confirm that spatial variation of electric field between the electrodes … Continue reading →

On 25th of July 2016, the prestigious international journal Nature Nanotechnology has published an article by an international group of scientists from the University of Strasbourg (France) and the University of Nova Gorica (Slovenia). The article presents the results of … Continue reading →

Researchers from the University of Nova Gorica (Slovenia), University of Strasbourg & CNRS (France) and the Humboldt University of Berlin (Germany)  have shown that a carefully chosen blend of a small photoswitchable molecule and a semiconducting polymer can be used … Continue reading →

Our researchers with collaboration of colleagues from MRL laboratory and IJS scientists, found a novel and efficient method used to improve carrier mobilities of poly(3-hexylthiophene) (P3HT)-based organic field effect transistors by means of nanowire formation. The treatment, termed solvation, consists … Continue reading →

Our group published new research in collaboration with colleagues from Max Planck Institute from Mainz. We demonstrated that high-transconductance organic thin film transistors can be achieved by depositing electrochemically exfoliated graphene flakes at the gate-dielectric/organic semiconductor (OS) interface. This effect … Continue reading →

Atomic force microscopy has been used to examine early stages of pentacene growth on exfoliated single-layer graphene transferred to SiO2 substrates. We have observed 2D growth with mean height of 1.5 ± 0.2 nm on as-transferred graphene. Three-dimensional islands of … Continue reading →

In collaboration with the University of Strasbourg and ISOF-CNR Bologna, Italy, our group published results of a study of graphene/organic semiconductor composites. Organic thin-film transistor transfer characteristics and time-of-flight (TOF) photoconductivity measurements were used to investigate the effect of the … Continue reading →

Using atomic force microscopy we have examined morphology of sub-monolayer thick pentacene layers, deposited on exfoliated single-layer and bilayer graphene, transferred onto SiO2. We observe two-dimensional island growth in the range of substrate temperatures from 10 to 60 °C. We find … Continue reading →

Together with Imperial College, Holst Centre, ICMM Madrid, University of Kentucky and ETH Zürich  we have been investigating electric transport properties of  5,11-bis(triethylsilylethynyl) anthradithiophene (TES ADT). TES ADT– one of the most promising, solution-processable small-molecular organic semiconductors – was analyzed, … Continue reading →

Graphene is the material of the future. Our group in collaboration with Serbian partners have examined the effects of transfer residue and sample annealing on the optical properties of chemical vapor deposited graphene, transferred onto a sapphire substrate. The optical … Continue reading →